Metal-induced states on the GaAs(110) surface probed by angle-resolved photoemission spectroscopy

Authors

D. Heskett, University of Rhode Island
D. Tang, University of Rhode Island
A. B. McLean, IBM Thomas J. Watson Research Center
R. Ludeke, IBM Thomas J. Watson Research Center
M. Prietsch, IBM Thomas J. Watson Research Center
T. Maeda Wong, University of Pennsylvania
E. W. Plummer, University of Pennsylvania
N. J. DiNardo, Drexel University

Document Type

Article

Date of Original Version

1-1-1991

Abstract

We have used the technique of angle-resolved photoemission with a synchrotron radiation source to probe the electronic states of the metal-semiconductor overlayer systems of K, Cs, and Bi deposited on the GaAs(110) surface. In all cases, we observe changes in the electronic states of the clean surface along with the detection of new metal-induced features. © 1991.

Publication Title, e.g., Journal

Applied Surface Science

Volume

48-49

Issue

C

Citation/Publisher Attribution

Heskett, D., D. Tang, A. B. McLean, R. Ludeke, M. Prietsch, T. Maeda Wong, E. W. Plummer, and N. J. DiNardo. "Metal-induced states on the GaAs(110) surface probed by angle-resolved photoemission spectroscopy." Applied Surface Science 48-49, C (1991): 260-263. doi: 10.1016/0169-4332(91)90341-G.