Occupied Surface-State Bands of Bi(1×1) Overlayers on an InAs(110) Surface Grown by Molecular-Beam Epitaxy
Date of Original Version
The ordered p(1×1) monolayer phase of Bi on InAs(110) has been studied with the technique of angle-resolved ultraviolet photoemission spectroscopy. Three Bi-induced surface-state bands (S’,S’’, and S’’’) have been observed. Their respective band dispersions have been mapped along the high-symmetry lines of the surface Brillouin zone. The upper two bands, S’ and S’’, appear to be degenerate across most of the surface Brillouin zone except along the Γ¯-X¯’ symmetry line. The bandwidths of the Bi-induced states of Bi/InAs(110) are significantly narrower than that of Bi/GaAs(110) or Sb/GaAs(110). The polarization of these surface-state bands has been measured and compared to predictions of current theoretical models for Sb/GaAs(110).
McIlroy, D. N., Heskett, D., Swanston, D. M., McLean, A. B., Ludeke, R., Munekata, H., Prietsch, M., & DiNardo, N. J. (1993). Occupied surface-state bands of Bi(1×1) overlayers on an InAs(110) surface grown by molecular-beam epitaxy. Physical Review B, 47(7), 3751-3759. doi: 10.1103/PhysRevB.47.3751
Available at: http://dx.doi.org/10.1103/PhysRevB.47.3751
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©1993 The American Physical Society