Electronic Band Structure of the Two-Dimensional Surface-State Bands of the (1×1) and (1×2) Phases of Bi/GaSb(110)

Authors

D. N. McIlroy, University of Rhode Island
David R. Heskett, University of Rhode IslandFollow
A. B. McLean
R. Ludeke
H. Munekata
N. J. DiNardo

Document Type

Article

Date of Original Version

10-15-1993

Abstract

The surface-state bands of the (1×1) and (1×2) phases of Bi/GaSb(110) have been probed using angle-resolved ultraviolet photoemission spectroscopy with synchrotron radiation. Four Bi-induced surface-state bands have been identified for both the (1×1) and the (1×2) phases. The bands with the lowest binding energies (S^I and S^II) have been attributed to intrachain bonding in the Bi overlayer and the higher-binding-energy bands (S^III and S^IV) to overlayer states involved in the back bonding of the overlayer to the substrate. Based on initial-state dispersion measurements, we conclude that the Bi chains in the epitaxial overlayer remain intact throughout the phase transition. We propose a model for the overlayer structure of the (1×2) phase of Bi/GaSb(110).

Citation/Publisher Attribution

McIlroy, D. N., Heskett, D., McLean, A. B., Ludeke,R., Munekata, H., & DiNardo. N. J. (1993). Electronic band structure of the two-dimensional surface-state bands of the (1×1) and (1×2) phases of Bi/GaSb(110). Physical Review B, 48(16), 11897-11904. doi: 10.1103/PhysRevB.48.11897

Available at: http://dx.doi.org/10.1103/PhysRevB.48.11897

Publisher Statement

©1993 The American Physical Society