Occupied Surface-State Bands of Bi(1×1) Overlayers on an InAs(110) Surface Grown by Molecular-Beam Epitaxy

Authors

D. N. McIlroy, University of Rhode Island
David R. Heskett, University of Rhode IslandFollow
D. M. Swanston
A. B. McLean
R. Ludeke
H. Munekata
M. Prietsch
N. J. DiNardo

Document Type

Article

Date of Original Version

2-15-1993

Abstract

The ordered p(1×1) monolayer phase of Bi on InAs(110) has been studied with the technique of angle-resolved ultraviolet photoemission spectroscopy. Three Bi-induced surface-state bands (S’,S’’, and S’’’) have been observed. Their respective band dispersions have been mapped along the high-symmetry lines of the surface Brillouin zone. The upper two bands, S’ and S’’, appear to be degenerate across most of the surface Brillouin zone except along the Γ¯-X¯’ symmetry line. The bandwidths of the Bi-induced states of Bi/InAs(110) are significantly narrower than that of Bi/GaAs(110) or Sb/GaAs(110). The polarization of these surface-state bands has been measured and compared to predictions of current theoretical models for Sb/GaAs(110).

Citation/Publisher Attribution

McIlroy, D. N., Heskett, D., Swanston, D. M., McLean, A. B., Ludeke, R., Munekata, H., Prietsch, M., & DiNardo, N. J. (1993). Occupied surface-state bands of Bi(1×1) overlayers on an InAs(110) surface grown by molecular-beam epitaxy. Physical Review B, 47(7), 3751-3759. doi: 10.1103/PhysRevB.47.3751

Available at: http://dx.doi.org/10.1103/PhysRevB.47.3751

Publisher Statement

©1993 The American Physical Society