GaAlAs p-i-n Junction Waveguide Modulator
Document Type
Article
Date of Original Version
1-1-1983
Abstract
Optical communications systems often require modulating elements which change the intensity, phase, or polarization of the light. A waveguide modulator has been fabricated in the form of a GaAlAs p-i-n heterostructure grown on the (110) crystallographic plane. The device rotates the plane of polarization of light as a function of the applied voltage. Monomode waveguiding and efficient modulation was achieved. The operation could be described with Jones matrices having voltage-dependent matrix elements. © 1983 IEEE
Publication Title, e.g., Journal
Journal of Lightwave Technology
Volume
1
Issue
1
Citation/Publisher Attribution
Lengyel, G.. "GaAlAs p-i-n Junction Waveguide Modulator." Journal of Lightwave Technology 1, 1 (1983): 251-255. doi: 10.1109/JLT.1983.1072063.
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