GaAlAs p-i-n junction waveguide modulators
Document Type
Conference Proceeding
Date of Original Version
11-30-1983
Abstract
The electro-optical effect (Pockels Effect) induced in zincblende structures can be utilized to modify the phase and polarization characteristics of the transmitted light. The III-V group of semiconductors and their ternary and quaternary mixtures represent a particularly important group of zincblende structures because these also provide the most important semiconductor laser materials. The characteristics of different crystal orientations and their possible uses in optical communication systems are reviewed. Polarization modulators are practically interesting devices which can be fabricated from these materials in waveguide form. Possible applications for these - in addition to polarization control - are intensity modulation and optical isolation. Polarization characteristics are analyzed with the help of Jones matrices. An example of a simple polarization modulator is presented and experimental results discussed. A good agreement with theoretical predictions was attained. © 1983 SPIE.
Publication Title, e.g., Journal
Proceedings of SPIE - The International Society for Optical Engineering
Volume
408
Citation/Publisher Attribution
Lengyel, Gabriel. "GaAlAs p-i-n junction waveguide modulators." Proceedings of SPIE - The International Society for Optical Engineering 408, (1983): 133-139. doi: 10.1117/12.935717.