Surface localized states on InAs(110)
Document Type
Article
Date of Original Version
6-10-1994
Abstract
The initial state band dispersion of the A3, A5 and C2 surface states on In As(110) has been determined using angle-resolved photoemission spectroscopy with synchrotron radiation. The surfaces were grown using molecular beam epitaxy. Although the measured dispersion of the anion-derived, dangling-bond A5 surface state is reproduced very well by several surface band structure calculations, the dispersion of the lower lying C2 surface state shows better agreement with surface electronic structure calculations based upon density functional theory. Furthermore, although the binding energy of the A3 state near X̄ is reproduced very well by tight-binding calculations, the band gradient along the \ ̄gGX̄ azimuth is reproduced best by calculations based on density functional theory. It is argued that the measured dispersion of the lower lying A3 and C2 states could be used to provide a stringent test of quasi-particle surface band structure calculations. © 1994.
Publication Title, e.g., Journal
Surface Science
Volume
312
Issue
3
Citation/Publisher Attribution
Swanston, D. M., A. B. McLean, D. N. McIlroy, D. Heskett, R. Ludeke, H. Munekata, M. Prietsch, and N. J. DiNardo. "Surface localized states on InAs(110)." Surface Science 312, 3 (1994): 361-368. doi: 10.1016/0039-6028(94)90727-7.