An optical microscopy imaging method for detection of electromigration-induced damage
Document Type
Article
Date of Original Version
9-1-2004
Abstract
Electromigration damage is a microscopic phenomenon involving electric field-induced diffusion, which is very relevant to damage in interconnects. Recently, we have developed a novel and useful optical microscopy method with which we can visually observe and record such damage formation during an accelerated stress test. This new non-contact technique provides complementary information to the more traditional probe of electrical resistance. © 2004 Elsevier B.V. All rights reserved.
Publication Title, e.g., Journal
Microelectronic Engineering
Volume
75
Issue
3
Citation/Publisher Attribution
Li, L. H., C. Piecuch, J. Hiatt, B. Setlik, and D. Heskett. "An optical microscopy imaging method for detection of electromigration-induced damage." Microelectronic Engineering 75, 3 (2004): 252-256. doi: 10.1016/j.mee.2004.06.001.