An optical microscopy imaging method for detection of electromigration-induced damage

Authors

L. H. Li, University of Rhode Island
C. Piecuch, University of Rhode Island
J. Hiatt, University of Rhode Island
B. Setlik, University of Rhode Island
D. Heskett, University of Rhode Island

Document Type

Article

Date of Original Version

9-1-2004

Abstract

Electromigration damage is a microscopic phenomenon involving electric field-induced diffusion, which is very relevant to damage in interconnects. Recently, we have developed a novel and useful optical microscopy method with which we can visually observe and record such damage formation during an accelerated stress test. This new non-contact technique provides complementary information to the more traditional probe of electrical resistance. © 2004 Elsevier B.V. All rights reserved.

Publication Title, e.g., Journal

Microelectronic Engineering

Volume

75

Issue

3

Citation/Publisher Attribution

Li, L. H., C. Piecuch, J. Hiatt, B. Setlik, and D. Heskett. "An optical microscopy imaging method for detection of electromigration-induced damage." Microelectronic Engineering 75, 3 (2004): 252-256. doi: 10.1016/j.mee.2004.06.001.