Electric field gradient of single impurities in aluminum

Document Type

Article

Date of Original Version

1-1-1983

Abstract

Single substitutional impurities of Mg, Zn, Ga, Ge, and Si in Al universely show very small electric field gradients at the second-nearest-neighbor sites, in obvious disagreement with theoretical calculations. We show that this does not likely reflect the neglect of nonspherical contributions to the induced charge density around the impurity. © 1983 The American Physical Society.

Publication Title, e.g., Journal

Physical Review B

Volume

27

Issue

8

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