Electric field gradient of single impurities in aluminum

Authors

L. M. Kahn, University of Rhode Island
F. Perrot, Commissariat a L'Energie Atomique CEA
M. Rasolt, Oak Ridge National Laboratory

Document Type

Article

Date of Original Version

1-1-1983

Abstract

Single substitutional impurities of Mg, Zn, Ga, Ge, and Si in Al universely show very small electric field gradients at the second-nearest-neighbor sites, in obvious disagreement with theoretical calculations. We show that this does not likely reflect the neglect of nonspherical contributions to the induced charge density around the impurity. © 1983 The American Physical Society.

Publication Title, e.g., Journal

Physical Review B

Volume

27

Issue

8

Citation/Publisher Attribution

Kahn, L. M., F. Perrot, and M. Rasolt. "Electric field gradient of single impurities in aluminum." Physical Review B 27, 8 (1983): 5110-5112. doi: 10.1103/PhysRevB.27.5110.