Electric field gradient of single impurities in aluminum
Document Type
Article
Date of Original Version
1-1-1983
Abstract
Single substitutional impurities of Mg, Zn, Ga, Ge, and Si in Al universely show very small electric field gradients at the second-nearest-neighbor sites, in obvious disagreement with theoretical calculations. We show that this does not likely reflect the neglect of nonspherical contributions to the induced charge density around the impurity. © 1983 The American Physical Society.
Publication Title, e.g., Journal
Physical Review B
Volume
27
Issue
8
Citation/Publisher Attribution
Kahn, L. M., F. Perrot, and M. Rasolt. "Electric field gradient of single impurities in aluminum." Physical Review B 27, 8 (1983): 5110-5112. doi: 10.1103/PhysRevB.27.5110.
