Cs-Induced Surface State on GaAs(110)

Authors

T. Maeda Wong
N. J. DiNardo
David R. Heskett, University of Rhode IslandFollow
E. W. Plummer

Document Type

Article

Date of Original Version

6-15-1990

Abstract

Cesium adsorption on GaAs(110) has been studied by angle-resolved photoemission spectroscopy at room temperature in the submonolayer-coverage regime. We report the observation of a Cs-induced surface state in the vicinity of the surface-Brillouin-zone edge. The possible origin of the state is discussed in relation to recent structural observations. The onset of the Cs-induced surface state can be correlated with the appearance of a second Cs 5p core-level emission feature at ∼0.2 monolayer Cs coverage.

Citation/Publisher Attribution

Maeda Wong, T., DiNardo, N. J., Heskett, D., & Plummer, E. W. (1990). Cs-induced surface state on GaAs(110). Physical Review B, 41(17), 12342-12345. doi: 10.1103/PhysRevB.41.12342

Available at: http://dx.doi.org/10.1103/PhysRevB.41.12342

Publisher Statement

©1990 The American Physical Society