Pump wavelength independent gain with bidirectionally pumped alumino-silicate erbium-doped fiber amplifiers in the 800 nm pump band
Document Type
Article
Date of Original Version
1-1-1991
Abstract
Using a comprehensive computer model, we have shown that the effects of excited state absorption (ESA), in the 800 nm pump band, in alumino-phosphate-silicate (APS) erbium-doped fiber amplifiers (EDFA’s) can be reduced significantly by using bidirectional pumping. Furthermore, if a “band optimum length” (BOL) is selected, a near optimum small signal gain (SSG) can be constant over a broad pump wavelength region and this is due to the combined effects of ESA and ground state absorption (GSA). Hence, multilongitudinal mode, high power, reliable and inexpensive GaAlAs laser diodes can be used as pumping sources for EDFA's having SSG > 40 dB, noise figures of < 4 dB and output signal powers approaching 100 mW and these could be used as line repeaters, preamplifiers, and power amplifiers in different lightwave systems. © 1991 IEEE.
Publication Title, e.g., Journal
IEEE Photonics Technology Letters
Volume
3
Issue
9
Citation/Publisher Attribution
Bastien, Steven P., and Harish R. Sunak. "Pump wavelength independent gain with bidirectionally pumped alumino-silicate erbium-doped fiber amplifiers in the 800 nm pump band." IEEE Photonics Technology Letters 3, 9 (1991): 825-828. doi: 10.1109/68.84507.