RELIABILITY OF SEMICONDUCTOR INJECTION LASERS.
Document Type
Conference Proceeding
Date of Original Version
1-1-1987
Abstract
Semiconductor injection lasers are key components in fiber optic communication systems, therefore their reliability is a determining factor in the technical success of these systems. Lasers are subject to several specific degradation mechanisms some of which affect the bulk of the optically active volume of the device, some the mirror facets and some the electrical or thermal contacts. The best way to assure high reliability of these devices in the field - in addition to perfecting and controlling the manufacturing processes - is the development of accelerated aging tests and the selection of strict and meaningful criteria for the acceptance or rejection of a particular device. The authors report that 40,000 hrs of operation have been achieved without appreciable degradation at 100 degree C and 5 mW output for GaAs/AlGaAs lasers even with ion-etched mirrors. 15,000 hrs of nearly degradation free operation have been reported for 1. 3 mu m lasers at 50 degree C and 5 mW output and at 70 degree C and 5 mW output.
Publication Title, e.g., Journal
Proceedings of SPIE - The International Society for Optical Engineering
Volume
717
Citation/Publisher Attribution
Wolf, H. D., K. Mettler, and G. Lengyel. "RELIABILITY OF SEMICONDUCTOR INJECTION LASERS.." Proceedings of SPIE - The International Society for Optical Engineering 717, (1987): 46-52. doi: 10.1117/12.937478.