Tradeoff Between Phase- and Intensity Modulation in GaAs/AlGaAs Double Heterostructure and Multiple Quantum Well Phase-Modulator Waveguides
Date of Original Version
The design of phase modulators in the III-V semiconductor material system requires an understanding of the behavior of phase- and intensity modulation characteristics near the band edge. Here, we experimentally studied the wavelength dependence of phase sensitivity (°/ mm V) and intensity modulation of a double heterostructure (DH) device and a multiquantum well (MQW) device in the GaAs/AlGaAs material system. The results show the tradeoff between phase- and intensity modulation and also shows that, for the same intensity modulation, the MQW device produces twice as much phase modulation as the DH device. For example, at an intensity modulation of -1 dB the MQW device has a phase sensitivity of 120°/mm V while the DH device gives a value of ≈60°/mm V. © 1990 IEEE
IEEE Photonics Technology Letters
Valliath, G. T., G. Lengyel, H. D. Wolf, L. Korte, and G. Kristen. "Tradeoff Between Phase- and Intensity Modulation in GaAs/AlGaAs Double Heterostructure and Multiple Quantum Well Phase-Modulator Waveguides." IEEE Photonics Technology Letters 2, 5 (1990): 340-342. doi:10.1109/68.54699.