The 2nd Order Analysis of IDDQ Test Data

Authors

• Shengli Li, University of Rhode Island
• Kai Zhang, University of Rhode Island
• Jien Chung Lo, University of Rhode Island

Document Type

Conference Proceeding

Date of Original Version

1-1-2000

Abstract

The proposed 2^nd order current signature technique considers both the 1^st order mean and the 2^nd order variance information to provide a more robust and more effective mean of die selection. We examined the IDDQ testing data from SEMATECH by the proposed 2^nd order current signature technique and compared the results to those of traditional single threshold and delta-IDDQ techniques We found that the 2^nd order analysis may enable a more robust way to IDDQ testing. In particular, a clear distinction can be made between defected and reflect-free dies. The defected dies identified by the proposed technique and by the delta-IDDQ technique are quite similar for the SEMATECH data. However, for the future deep sub-micron VLSI where the mean IDDQ value may vary significantly, the proposed technique has a definite advantage of being more robust.

Publication Title, e.g., Journal

Proceedings IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems

Volume

Part F5373300

Citation/Publisher Attribution

Li, Shengli, Kai Zhang, and Jien Chung Lo. "The 2nd Order Analysis of IDDQ Test Data." Proceedings IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems Part F5373300, (2000). doi: 10.1109/DFTVS.2000.887178.