Amorphous Silicon-Carbon-Fluorine Alloy Films

Authors

R. Dutta
P. K. Banerjee, University of Rhode IslandFollow
S. S. Mitra

Document Type

Article

Date of Original Version

1983

Department

Electrical Engineering

Abstract

A new amorphous semiconductor alloy system Si_xC_xF_y has been prepared by rf sputtering of polycrystalline SiC in an Ar+SiF₄ atmosphere. Dark conductivity and optical absorption of thin films are measured as functions of F concentration. Infrared spectra indicate a preferential attachment of fluorine to carbon over silicon. The bonded fluorine concentration is estimated to be as high as 40 at. %. The principal reststrahlen band shifts to higher frequencies and appears to sharpen with the increase of fluorine concentration. Fluorinated films are observed to be resistant to high-temperature annealing.

Citation/Publisher Attribution

Dutta, R., Banerjee, P. K., & Mitra, S. S. (1983). Amorphous silicon-carbon-fluorine alloy films. Physical Review B, 27(8), 5032-5038. doi: 10.1103/PhysRevB.27.5032

Available at: http://dx.doi.org/10.1103/PhysRevB.27.5032