Date of Original Version
Silicon nitride fabricated by low-pressure chemical vapor deposition (LPCVD) to be silicon-rich (SiNx), is a ubiquitous insulating thin film in the microelectronics industry, and an exceptional structural material for nanofabrication. Free-standing <100 nm-thick SiNx membranes are especially compelling, particularly when used to deliver forefront molecular sensing capabilities in nanofluidic devices. We developed an accessible, gentle, and solution-based photo-directed surface metallization approach well-suited to forming patterned metal films as integral structural and functional features in thin-membrane-based SiNx devices—for use as electrodes or surface chemical functionalization platforms, for example—augmenting existing device capabilities and properties for a wide range of applications.
Bandara, Y.M. Nuwan D.Y. et al. "Solution-Based Photo-Patterned Gold Film Formation on Silicon Nitride." ACS Appl. Mater. Interfaces, 2016, 8 (51). Available: https://pubs.acs.org/doi/abs/10.1021/acsami.6b12720