Date of Original Version
Silicon nitride fabricated by low-pressure chemical vapor deposition (LPCVD) to be silicon-rich (SiNx), is a ubiquitous insulating thin film in the microelectronics industry, and an exceptional structural material for nanofabrication. Free-standingcompelling, particularly when used to deliver forefront molecular sensing capabilities in nanofluidic devices. We developed an accessible, gentle, and solution-based photo-directed surface metallization approach well-suited to forming patterned metal films as integral structural and functional features in thin-membrane-based SiNx devices—for use as electrodes or surface chemical functionalization platforms, for example—augmenting existing device capabilities and properties for a wide range of applications.
Bandara, Y. M. Nuwan D. Y., Karawdeniya, B. I., Whelan, J. C., Ginsberg, L. D.S., & Dwyer, J. R. (2016). Solution-Based Photo-Patterned Gold Film Formation on Silicon Nitride. ACS Appl. Mater. Interfaces, 8(51), 34964-34969. doi: 10.1021/acsami.6b12720
Available at: http://dx.doi.org/10.1021/acsami.6b12720