Title

MORPHOLOGICAL STABILITY OF A PLANAR SOLIDIFYING BINARY MIXTURE.

Authors

Arijit Bose, University of Rhode Island

Document Type

Conference Proceeding

Date of Original Version

12-1-1984

Abstract

Solidification from solutions is of great interest in several practical processes. In crystal growth for the semiconductor industry, for example, it is important to maintain a planar morphology and not have dendritic growth, to avoid lateral inhomogenities in electrical properties. In this paper, linear morphological stability theory is generalized to apply to both rapid and slow solidification rates. Several previous results are shown to be special cases of the general stability criterion derived here. Morphological instability is assumed to occur whenever lateral variations in solidification rate propagate. Calculations (assuming equilibrium interfacial conditions) for a 91. 1% Pb-8. 9% Sn system show that increasing the interface velocity from 10** minus **4 to 10**2 cm/sec decreases the stability limit mainly through an increase in the interfacial solute concentration gradient.

Publication Title, e.g., Journal

Annual Meeting - American Institute of Chemical Engineers

Citation/Publisher Attribution

Bose, Arijit. "MORPHOLOGICAL STABILITY OF A PLANAR SOLIDIFYING BINARY MIXTURE.." Annual Meeting - American Institute of Chemical Engineers (1984). https://digitalcommons.uri.edu/che_facpubs/529