Electrical Characterization of Some Native Insulators on Germanium

Authors

O. J. Gregory, University of Rhode Island
E. E. Crisman, University of Rhode Island
Lisa Pruitt, University of Rhode Island
D. J. Hymes, University of Rhode Island
James J. Rosenberg, University of Rhode Island

Document Type

Conference Proceeding

Date of Original Version

12-1-1987

Abstract

Preliminary characterization of two native insulators on germanium is reported. A technique for preparing oxide by a room temperature chemical technique (wet chemical oxidation) is described. Compositional data based on IR transmission and ellipsometry, as well as characteristics of MOS capacitors based on this film are given. Also, compositional and electrical characterization of nitrided atmospheric pressure oxides are reported here. These films have very low fixed charge and interface state densities, and show excellent potential for use as gate insulators in a germanium MOS technology.

Publication Title, e.g., Journal

Materials Research Society Symposia Proceedings

Volume

76

Citation/Publisher Attribution

Gregory, O. J., E. E. Crisman, Lisa Pruitt, D. J. Hymes, and James J. Rosenberg. "Electrical Characterization of Some Native Insulators on Germanium." Materials Research Society Symposia Proceedings 76, (1987): 307-311. https://digitalcommons.uri.edu/che_facpubs/371