Nitridation of high-purity single-crystal silicon

O. J. Gregory, Brown University
M. H. Richman, Brown University


Single-crystal silicon was nitrided using various time-temperature schedules in an attempt to verify some of the reaction-bonding mechanisms already established for the nitridation of polycrystalline silicon. Several characteristic reaction-bonded Si3N4 morphologies were observed on the silicon, as well as some new morphologic evidence of the formation of β-Si3N4. © 1982.