Nitridation of high-purity single-crystal silicon
Abstract
Single-crystal silicon was nitrided using various time-temperature schedules in an attempt to verify some of the reaction-bonding mechanisms already established for the nitridation of polycrystalline silicon. Several characteristic reaction-bonded Si3N4 morphologies were observed on the silicon, as well as some new morphologic evidence of the formation of β-Si3N4. © 1982.
This paper has been withdrawn.