Title

Characterisation of N Channel Germanium Mosfet with Gate Insulator formed by High-Pressure Thermal Oxidation

Document Type

Article

Date of Original Version

1-1-1987

Abstract

N-channel Ge MOSFETs are fabricated with the use of a double-layer gate oxide consisting of electron beam evaporated SiO2 over a native GeO2 oxide, formed by high-pressure thermal oxidation. Interface properties of the MOS structure, determined by capacitance/voltage and mobility measurements, are shown to be suitable for FET devices. © 1987, The Institution of Electrical Engineers. All rights reserved.

Publication Title

Electronics Letters

Volume

23

Issue

1

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