Characterisation of N Channel Germanium Mosfet with Gate Insulator formed by High-Pressure Thermal Oxidation
Date of Original Version
N-channel Ge MOSFETs are fabricated with the use of a double-layer gate oxide consisting of electron beam evaporated SiO2 over a native GeO2 oxide, formed by high-pressure thermal oxidation. Interface properties of the MOS structure, determined by capacitance/voltage and mobility measurements, are shown to be suitable for FET devices. © 1987, The Institution of Electrical Engineers. All rights reserved.
Crisman, E. E., J. I. Lee, P. J. Stiles, and O. J. Gregory. "Characterisation of N Channel Germanium Mosfet with Gate Insulator formed by High-Pressure Thermal Oxidation." Electronics Letters 23, 1 (1987): 8-10. doi:10.1049/el:19870006.