Characterisation of N Channel Germanium Mosfet with Gate Insulator formed by High-Pressure Thermal Oxidation

Authors

E. E. Crisman, Brown University
J. I. Lee, Brown University
P. J. Stiles, Brown University
O. J. Gregory, University of Rhode IslandFollow

Document Type

Article

Date of Original Version

1-1-1987

Abstract

N-channel Ge MOSFETs are fabricated with the use of a double-layer gate oxide consisting of electron beam evaporated SiO2 over a native GeO2 oxide, formed by high-pressure thermal oxidation. Interface properties of the MOS structure, determined by capacitance/voltage and mobility measurements, are shown to be suitable for FET devices. © 1987, The Institution of Electrical Engineers. All rights reserved.

Publication Title, e.g., Journal

Electronics Letters

Volume

23

Issue

1

Citation/Publisher Attribution

Crisman, E. E., J. I. Lee, P. J. Stiles, and O. J. Gregory. "Characterisation of N Channel Germanium Mosfet with Gate Insulator formed by High-Pressure Thermal Oxidation." Electronics Letters 23, 1 (1987): 8-10. doi: 10.1049/el:19870006.