Chemical vapor deposition of alpha aluminum oxide for high-temperature aerospace sensors

Authors

Raymond H. Niska, Honeywell International Inc.
Alan P. Constant, Iowa State University
Tony Witt, Iowa State University
Otto J. Gregory, University of Rhode IslandFollow

Document Type

Article

Date of Original Version

7-1-2000

Abstract

The process development used to deposit the α alumina layer on the thermally grown oxide (TGO) using chemical vapor deposition (CVD) in a coldwall reactor at 1100 °C was investigated. As shown by x ray diffraction (XRD), the resulting films were found to be dense, with good electrical isolation properties. The stator specimens showing poor film uniformity and problems with adherence is attributed to high growth and gas flow dynamics, not source depletion.

Publication Title, e.g., Journal

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volume

18

Issue

4 II

Citation/Publisher Attribution

Niska, Raymond H., Alan P. Constant, Tony Witt, and Otto J. Gregory. "Chemical vapor deposition of alpha aluminum oxide for high-temperature aerospace sensors." Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 18, 4 II (2000): 1653-1658. doi: 10.1116/1.582401.