Stabilization of Ceramic Strain Gages to Temperatures beyond 1500°C

Authors

Otto J. Gregory, University of Rhode IslandFollow
Michael J. Platek, University of Rhode Island
Tao You, University of Rhode Island

Document Type

Conference Proceeding

Date of Original Version

12-1-2003

Abstract

The stability of thin film strain gages based on indium-tin-oxide (ITO), at temperature approaching 1500°C, was discussed. High temperature static strain tests indicated that the piezoresistive response and electrical stability depend on the thickness of ITO films comprising the active strain element of these sensors. Sputtered ITO films, doped with aluminum were stable in air to temperatures in excess of 1530 °C. It was found that aluminum doping of the ITO film appears to create a barrier around the ITO structures, which helps to resist oxidation and further stabilizes the ITO thin film at elevated temperatures.

Publication Title, e.g., Journal

Proceedings of the International Instrumentation Symposium

Volume

49

Citation/Publisher Attribution

Gregory, Otto J., Michael J. Platek, and Tao You. "Stabilization of Ceramic Strain Gages to Temperatures beyond 1500°C." Proceedings of the International Instrumentation Symposium 49, (2003): 23-34. https://digitalcommons.uri.edu/che_facpubs/186