Date of Original Version
We report the pyroelectric response of c-axis oriented, undoped, wurtzite, aluminum nitride reactively sputtered onto polished silicon wafers. The voltage between a metallic contact on the AlN surface and the n+-doped silicon substrate was monitored during pulsed infrared, radiant heating. From analysis of the data, a pyroelectric voltage coefficient, PV, in excess of 0.5 � 106 V/m/K was extracted for films in the 600 to 2500 Å thickness range.
Chrisman, Everett E., John S. Derov, Alvin J. Drehman and Otto J. Gregory. "Large Pyroelectric Response From Reactively Sputtered Aluminum Nitride Thin Films." Electrochemical and Solid State Letters. 8(3):H31-H32. 2005.