Date of Original Version
We report the pyroelectric response of c-axis oriented, undoped, wurtzite, aluminum nitride reactively sputtered onto polished silicon wafers. The voltage between a metallic contact on the AlN surface and the n+ -doped silicon substrate was monitored during pulsed infrared, radiant heating. From analysis of the data, a pyroelectric voltage coefficient, PV, in excess of 0.5 x 106 V/m/K was extracted for films in the 600 to 2500 Å thickness range.
Chrisman, E. E., Derov, J. S., Drehman, A. J., & Gregory, O. J. (2005). Large Pyroelectric Response From Reactively Sputtered Aluminum Nitride Thin Films. Electrochemical and Solid State Letters, 8(3), H31-H32. doi: 10.1149/1.1857742
Available at: http://dx.doi.org/10.1149/1.1857742