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We report the pyroelectric response of c-axis oriented, undoped, wurtzite, aluminum nitride reactively sputtered onto polished silicon wafers. The voltage between a metallic contact on the AlN surface and the n+ -doped silicon substrate was monitored during pulsed infrared, radiant heating. From analysis of the data, a pyroelectric voltage coefficient, PV, in excess of 0.5 x 106 V/m/K was extracted for films in the 600 to 2500 Å thickness range.

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© The Electrochemical Society, Inc. 2005. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in Electrochemical and Solid-State Letters, 8(3) H31-H32 (2005).