Surface etching of YBCO films by xenon difluoride

Authors

Benjamin L. Crossley, Air Force Cambridge Research Laboratories
Alvin J. Drehman, Air Force Cambridge Research Laboratories
James R. Reid, Air Force Cambridge Research Laboratories
John S. Derov, Air Force Cambridge Research Laboratories
Alfredo A. Corrales, Florida International University
Everett E. Crisman, University of Rhode Island

Document Type

Article

Date of Original Version

12-1-2005

Abstract

We have demonstrated that xenon difluoride (Xe F2) etches thin films of Y Ba2 Cu3 O7-x, the superconducting form of yttrium-barium-copper-oxide (YBCO), during dry etch processing. Both c -axis and mixed ac -axis YBCO films show evidence of such etching with a axis being more reactive. Profiles of YBCO films examined by ESCA show that the surfaces of both etched and unetched films are barium rich at the expense of yttrium. After Xe F2 etching, fluorine was found to be present to a depth of at least 40 nm. Despite the etching and the presence of fluorine in the YBCO films, the superconducting transition temperature, Tc, was unaffected by the Xe F2 treatment. © 2005 American Vacuum Society.

Publication Title, e.g., Journal

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volume

23

Issue

4

Citation/Publisher Attribution

Crossley, Benjamin L., Alvin J. Drehman, James R. Reid, John S. Derov, Alfredo A. Corrales, and Everett E. Crisman. "Surface etching of YBCO films by xenon difluoride." Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 23, 4 (2005): 1607-1610. doi: 10.1116/1.1978894.