High-temperature thermoelectric properties of compounds in the system Zn x in y O x+1.5y
Document Type
Article
Date of Original Version
1-1-2013
Abstract
Based on results obtained utilizing combinatorial chemistry techniques to screen the thermoelectric power factor of materials in the system Zn x In y O x+1.5y, several multiphase candidates were down-selected and investigated in terms of their thermoelectric response from room temperature to 1050 C. While the screening experiments suggested that peaks in the power factor occur at relatively high indium oxide content, only the thermoelectric properties of zinc-oxide-rich homologous layered phases in the system (In2O3)(ZnO) k have been well documented, since the phases where k < 3 cannot be easily formed. In the present study, indium-oxide-rich materials in the system In2O 3-(In2O3)(ZnO)3 were fabricated and their figures of merit were determined. The results suggest that the indium-oxide-rich phases have improved figures of merit, especially at elevated temperatures, relative to the best performing k phases by combining the high power factor of In2O3 and the low thermal conductivity of (In2O3)(ZnO) k . © 2012 TMS.
Publication Title, e.g., Journal
Journal of Electronic Materials
Volume
42
Issue
1
Citation/Publisher Attribution
Amani, Matin, Ian M. Tougas, Otto J. Gregory, and Gustave C. Fralick. "High-temperature thermoelectric properties of compounds in the system Zn x in y O x+1.5y." Journal of Electronic Materials 42, 1 (2013): 114-120. doi: 10.1007/s11664-012-2300-6.