Date of Original Version
A new amorphous semiconductor alloy system SixCxFy has been prepared by rf sputtering of polycrystalline SiC in an Ar+SiF4 atmosphere. Dark conductivity and optical absorption of thin films are measured as functions of F concentration. Infrared spectra indicate a preferential attachment of fluorine to carbon over silicon. The bonded fluorine concentration is estimated to be as high as 40 at. %. The principal reststrahlen band shifts to higher frequencies and appears to sharpen with the increase of fluorine concentration. Fluorinated films are observed to be resistant to high-temperature annealing.
R. Dutta, P. K. Banerjee, and S. S. Mitra. (1983). "Amorphous silicon-carbon-fluorine alloy films." Physical Review B, 27(8), 5032. Available at: http://dx.doi.org/10.1103/PhysRevB.27.5032