Metal-induced states on the GaAs(110) surface probed by angle-resolved photoemission spectroscopy
Date of Original Version
We have used the technique of angle-resolved photoemission with a synchrotron radiation source to probe the electronic states of the metal-semiconductor overlayer systems of K, Cs, and Bi deposited on the GaAs(110) surface. In all cases, we observe changes in the electronic states of the clean surface along with the detection of new metal-induced features. © 1991.
Publication Title, e.g., Journal
Applied Surface Science
Heskett, D., D. Tang, A. B. McLean, R. Ludeke, M. Prietsch, T. Maeda Wong, E. W. Plummer, and N. J. DiNardo. "Metal-induced states on the GaAs(110) surface probed by angle-resolved photoemission spectroscopy." Applied Surface Science 48-49, C (1991): 260-263. doi: 10.1016/0169-4332(91)90341-G.