Electric field gradient of single impurities in aluminum
Date of Original Version
Single substitutional impurities of Mg, Zn, Ga, Ge, and Si in Al universely show very small electric field gradients at the second-nearest-neighbor sites, in obvious disagreement with theoretical calculations. We show that this does not likely reflect the neglect of nonspherical contributions to the induced charge density around the impurity. © 1983 The American Physical Society.
Publication Title, e.g., Journal
Physical Review B
Kahn, L. M., F. Perrot, and M. Rasolt. "Electric field gradient of single impurities in aluminum." Physical Review B 27, 8 (1983): 5110-5112. doi: 10.1103/PhysRevB.27.5110.