Title

A 2-ns Detecting Time, 2-μ m CMOS Built-in Current Sensing Circuit

Document Type

Article

Date of Original Version

1-1-1993

Abstract

Built-in current testing is known to enhance the defect coverage in CMOS VLSI. In this paper, an experimental CMOS chip containing a high-speed built-in current sensing (BICS) circuit design is described. This chip has been fabricated through MOSIS 2-μ m p-well CMOS technology. The power bus current of an 8 x 8 parallel multiplier is monitored. This BICS detects all implanted short-circuit defects and some implanted open-circuit defects at a clock speed of 30 MHz (limited by the test setup). SPICE3 simulations indicate a defect detection time of about 2 ns. © 1993 IEEE

Publication Title

IEEE Journal of Solid-State Circuits

Volume

28

Issue

1

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