Title

GaAlAs p-i-n Junction Waveguide Modulator

Document Type

Article

Date of Original Version

1-1-1983

Abstract

Optical communications systems often require modulating elements which change the intensity, phase, or polarization of the light. A waveguide modulator has been fabricated in the form of a GaAlAs p-i-n heterostructure grown on the (110) crystallographic plane. The device rotates the plane of polarization of light as a function of the applied voltage. Monomode waveguiding and efficient modulation was achieved. The operation could be described with Jones matrices having voltage-dependent matrix elements. © 1983 IEEE

Publication Title, e.g., Journal

Journal of Lightwave Technology

Volume

1

Issue

1

Link to Full Text
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