Title

Optical Characteristics of CMOS-Fabricated MOSFET's

Document Type

Article

Date of Original Version

1-1-1987

Abstract

A CMOS-fabricated MOSFET in a floating p-well on a semiconducting n-type substrate is optically sensitive and can be used for photoreception in CMOS circuitry. Experimental results for the logarithmic dependence of threshold voltage Vth and channel current ID on light intensity compare well with theory. However, the floating p-well also causes IDand Vth to depend on the drain voltage due to impact ionization, and allows parasitic bipolar junction transistors (BJT‘s) to become dominant when p-well potential exceeds to 0.65 V or when source area is very large. Solutions are proposed to minimize these negative effects. Copyright © 1987 by The Institute of Electrical and Electronics Engineers, Inc.

Publication Title

IEEE Journal of Solid-State Circuits

Volume

22

Issue

2

Share

COinS