Title

Native Oxides Formed on Single-Crystal Germanium by Wet Chemical Reactions

Document Type

Article

Date of Original Version

1-1-1988

Abstract

The preparation of stable oxide films on single-crystal germanium surfaces by a room temperature “wet” chemical oxidation technique is described. Characterization by IR-transmission, ellipsometry, x-ray photoelectron spectroscopy, Rutherford backscattering, and electron microscopy show that such films are dense, uniform, and free of defects. The oxides are a mixture of two germanium dioxide phases both of which have a cristobalite atomic configuration. Unlike hexagonal germania, these films are stable in both water and hydrofluoric acid. They can be totally converted to the hexagonal dioxide phase by heat-treatment in either oxygen or nitrogen ambient at 600°C. The growth kinetics, mechanisms and morphologies of the oxides formed by this method are presented. Preliminary evaluation of the electronic character of the oxide/semiconductor interface is also included. © 1988, The Electrochemical Society, Inc. All rights reserved.

Publication Title

Journal of the Electrochemical Society

Volume

135

Issue

4

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