Stabilization of Ceramic Strain Gages to Temperatures beyond 1500°C
Date of Original Version
The stability of thin film strain gages based on indium-tin-oxide (ITO), at temperature approaching 1500°C, was discussed. High temperature static strain tests indicated that the piezoresistive response and electrical stability depend on the thickness of ITO films comprising the active strain element of these sensors. Sputtered ITO films, doped with aluminum were stable in air to temperatures in excess of 1530 °C. It was found that aluminum doping of the ITO film appears to create a barrier around the ITO structures, which helps to resist oxidation and further stabilizes the ITO thin film at elevated temperatures.
Publication Title, e.g., Journal
Proceedings of the International Instrumentation Symposium
Gregory, Otto J., Michael J. Platek, and Tao You. "Stabilization of Ceramic Strain Gages to Temperatures beyond 1500°C." Proceedings of the International Instrumentation Symposium 49, (2003): 23-34. https://digitalcommons.uri.edu/che_facpubs/186