Large pyroelectric response from reactively sputtered aluminum nitride thin films
Abstract
We report the pyroelectric response of c-axis oriented, undoped, wurtzite, aluminum nitride reactively sputtered onto polished silicon wafers. The voltage between a metallic contact on the AlN surface and the n+-doped silicon substrate was monitored during pulsed infrared, radiant heating. From analysis of the data, a pyroelectric voltage coefficient, PV, in excess of 0.5 × 106 V/m/K was extracted for films in the 600 to 2500 Å thickness range. © 2005 The Electrochemical Society. All rights reserved.
This paper has been withdrawn.