Observation of large, anomalous pyroelectric response in AlN thin films
Date of Original Version
We have observed a pyroelectric effect (PE) in reactively sputtered aluminum nitride (AlN) thin films that is typically a factor of twenty greater than commercial pyroelectric materials such as triglycine sulfate (TGS). This is most likely due to an extrinsic effect since the known crystalline structures of AlN are too symmetric to allow such high values for the PE response. Preliminary annealing studies support the assumption that residual strains remaining from the AlN thin film deposition are the most likely source of the anomalously high PE response. The results of these studies are presented along with some measurements that indicate a still higher PE response might be obtainable. © 2011 Materials Research Society.
Publication Title, e.g., Journal
Materials Research Society Symposium Proceedings
Crisman, Everett, Vladimir Vasilyev, Alvin Drehman, and Richard Webster. "Observation of large, anomalous pyroelectric response in AlN thin films." Materials Research Society Symposium Proceedings 1288, (2011): 121-126. doi: 10.1557/opl.2011.627.