Amorphous Silicon-Carbon-Fluorine Alloy Films

R. Dutta
P. K. Banerjee, University of Rhode Island
S. S. Mitra

©1983 The American Physical Society

Abstract

A new amorphous semiconductor alloy system Si_xC_xF_y has been prepared by rf sputtering of polycrystalline SiC in an Ar+SiF₄ atmosphere. Dark conductivity and optical absorption of thin films are measured as functions of F concentration. Infrared spectra indicate a preferential attachment of fluorine to carbon over silicon. The bonded fluorine concentration is estimated to be as high as 40 at. %. The principal reststrahlen band shifts to higher frequencies and appears to sharpen with the increase of fluorine concentration. Fluorinated films are observed to be resistant to high-temperature annealing.