Title

Large Pyroelectric Response from Reactively Sputtered Aluminum Nitride Thin Films

Authors

Everett E. Crisman
John S. Derov
Alvin J. Drehman
Otto J. Gregory, University of Rhode IslandFollow

Document Type

Article

Date of Original Version

2005

Abstract

We report the pyroelectric response of c-axis oriented, undoped, wurtzite, aluminum nitride reactively sputtered onto polished silicon wafers. The voltage between a metallic contact on the AlN surface and the n⁺ -doped silicon substrate was monitored during pulsed infrared, radiant heating. From analysis of the data, a pyroelectric voltage coefficient, P_V, in excess of 0.5 x 10⁶ V/m/K was extracted for films in the 600 to 2500 Å thickness range.

Citation/Publisher Attribution

Chrisman, E. E., Derov, J. S., Drehman, A. J., & Gregory, O. J. (2005). Large Pyroelectric Response From Reactively Sputtered Aluminum Nitride Thin Films. Electrochemical and Solid State Letters, 8(3), H31-H32. doi: 10.1149/1.1857742

Available at: http://dx.doi.org/10.1149/1.1857742

Publisher Statement

© The Electrochemical Society, Inc. 2005. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in Electrochemical and Solid-State Letters, 8(3) H31-H32 (2005).